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May 23, 2024 | 
pubs.aip.org | Grzegorz Greczynski |Angela C. Stelson |Xie Zhang
Finally, the experimentally obtained μ e is compared with the calculated one. Figure 8 shows the temperature dependence of the experimental and calculated μ e. μ e is generally given by(1)where e is the elementary charge, ⟨ τ ⟩ is the average scattering time, and m ∗ is the effective mass.
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May 20, 2024 | 
pubs.aip.org | Xie Zhang |Grzegorz Greczynski |Angela C. Stelson
Figure 2 shows the process for the sample preparation. CVD films were deposited on the Ib diamond substrates synthesized by high-pressure and high-temperature (HPHT) conditions, using microwave ( μ-wave) plasma. The μ-wave power of 750 W from the klystron was injected into the sample holder settled in the quartz tube, with flowing mixed CH 4/H 2 gases of 0.05% ratio, resulting in the sample temperature during deposition being kept at 800 °C. Deposited film thickness was 1.3 μm.
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May 20, 2024 | 
pubs.aip.org | Vinod Kumar |Xie Zhang |Grzegorz Greczynski |Angela C. Stelson
Topics
Polymers,
Probability theory,
Electrospinning,
Non Newtonian fluids,
Aerodynamics,
Fluid jets,
Fluid drag,
Viscoelasticity,
Viscosity
The quasi one-dimensional model previously developed, as mentioned in Refs. 1–3, is established in this study as an effective tool to explore dynamics of three-dimensional viscoelastic jets.
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May 17, 2024 | 
pubs.aip.org | Xi'an Jiaotong |Xie Zhang |Grzegorz Greczynski |Angela C. Stelson
Topics Band gap, Phonons, Ion implantation, Crystallographic defects, Recombination reactions, Photoluminescence spectroscopy As a potential carrier for quantum computing and communication qubits, the nitrogen vacancy (NV) centers of diamond exhibit special properties for the implementation of novel quantum devices.1,2 It has development potential in numerous applications of quantum state engineering and magnetic sensors3,4 due to its long-lived spin quantum state and evident atomic like...
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May 17, 2024 | 
pubs.aip.org | Xie Zhang |Grzegorz Greczynski |Angela C. Stelson
First-principles calculations are performed using the projector-augmented wave (PAW) method implanted in the Vienna ab initio simulation package (VASP).43 The wave functions are expanded by using the plane wave energy cutoff of 500 eV.
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May 15, 2024 | 
pubs.aip.org | Xie Zhang |Grzegorz Greczynski |Angela C. Stelson |Optical Metastructures
Topics Plasmonics, Semiconductors, Electrical properties and parameters, Field effect transistors, Heterostructures, Epitaxy, Fourier transform spectroscopy, Optical properties, Absorption line, Plasma waves The terahertz (THz) frequency band is currently attracting significant interest due to the proposed new applications and those that have already been explored.1–6 However, reaching even the sub-terahertz (sub-THz) frequencies requires decreasing the dimensions of field effect and bipolar...
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May 15, 2024 | 
pubs.aip.org | Chaozhou Branch |Xie Zhang |Grzegorz Greczynski |Angela C. Stelson
Topics
Molecular dynamics,
Crystallographic defects,
Crystal structure,
Deformation,
Mechanical stress,
Polycrystalline material,
Nano-indentation,
Surface strains,
Nanomaterials,
Grain boundary diffusion
Tungsten is a refractory metal with exceptionally high strength, hardness, and high melting point.1–5 When it comes to high-temperature components such as plasma-facing walls and diverters,6,7 tungsten has showcased its potential utility in fusion reactors.
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May 10, 2024 | 
pubs.aip.org | Aerospace Engineering |Xie Zhang |Grzegorz Greczynski |Angela C. Stelson
Topics Electric propulsion, Space propulsion, Materials analysis, Sputter deposition, Computational models, Computer simulation, Fusion energy, Plasma material interactions Anticipated breakthroughs in fusion energy and space electric propulsion (EP) in the coming decades will likely be tied to parallel advancements in the ability of materials to endure the harsh plasma-facing conditions that these systems produce.1–4 Finding materials that are capable of withstanding these environments is...
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May 8, 2024 | 
pubs.aip.org | Grzegorz Greczynski |Xie Zhang |Angela C. Stelson
Topics
Scanning probe microscopy,
Crystal structure,
Annealing,
Ion implantation,
Raman spectroscopy,
Thermal effects,
Transmission electron microscopy
Silicon carbide (SiC) power devices, such as SiC diodes and transistors, are currently being developed by researchers. Impurity doping via ion implantation is essential for device processing and is crucial in the realization of high-performance SiC devices.
