Daniel John

2 months ago | ro.uow.edu.au | Daniel Bennett |Daniel John

thesis posted on 2025-02-19, 04:26 authored by Daniel John BennettThis study investigates the use of a specially developed P-I-N diode to measure displacement damage in a silicon substrate caused by irradiation from 400 MeV/u 20Ne, 500 MeV/u 40Ar, 290 MeV/u 12C, and 6, 9, 12, 20 MeV electrons. Various energy levels of heavy ions attenuated by PMMA beam degraders were assessed. The study focuses on the forward voltage shift of the P-I-N diode as an indicator of displacement damage in silicon.