Felipe Murphy-Armando

Oct 14, 2024 | onlinelibrary.wiley.com | Felipe Murphy-Armando |Chang Liu |Yi Zhao |Ray Duffy

1 Introduction Leakage currents in metal–oxide–semiconductor (MOS) devices are undesirable as they drain power supply resources in integrated circuits and systems. The International Roadmap for Devices and Systems[1] specifies leakage targets for current and future generation MOS technologies, but it is not fully understood how difficult many of these targets will be to achieve, which physical mechanisms are most responsible, and what should be done to alleviate the expected problems.

Oct 14, 2024 | onlinelibrary.wiley.com | Chang Liu |Yi Zhao |Ray Duffy |Felipe Murphy-Armando

1 Introduction Leakage currents in metal–oxide–semiconductor (MOS) devices are undesirable as they drain power supply resources in integrated circuits and systems. The International Roadmap for Devices and Systems[1] specifies leakage targets for current and future generation MOS technologies, but it is not fully understood how difficult many of these targets will be to achieve, which physical mechanisms are most responsible, and what should be done to alleviate the expected problems.