Furong Han

Aug 24, 2024 | nature.com | Furong Han |Fan Yang |Huaiwen Yang |Qinghua Zhang |Hao Wu |Jingsheng Chen | +3 more

AbstractThe free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported.