Hyoung Woo Kim

Apr 5, 2024 | pubs.rsc.org | Jeongmin Kim |Hyoung Woo Kim |Junghun Kim |Seokjin Ko

High-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure β-gallium oxide (β-Ga2O3) has emerged as a superior power semiconductor material, outperforming GaN and 4H-SiC, owing to its high breakdown field and Baliga’s figure-of-merit. Nanoscale β-Ga2O3 has compatibility with Si and various two-dimensional materials, offering advanced heterostructure electrical nanodevices.