Kian Ping Loh

Oct 31, 2024 | nature.com | Runlai Li |Zirui Wang |Yuwen Zeng |Xiaoxu Zhao |Wenbing Hu |Kian Ping Loh

AbstractPlastic films are among the most used materials. In many applications, both high strength and low thickness are required. The thickness of free-standing plastic films has recently been reduced to micrometres, 200 nm and even 60 nm. Pushing this boundary further faces considerable challenges, as processability conflicts with stability at the ‘ultrathin’ scale (below ~100–200 nm).

Aug 25, 2024 | nature.com | Yi Luo |Runlai Li |Wen-Na Jiao |Si Huang |Wei-De Zhu |Hongfei Wang | +5 more

AbstractHierarchical assembly is used to construct complex materials using elementary building units, mainly depending on the non-covalent interactions involving dynamic bonds. Here we present a hierarchical assembly strategy to build highly crystalline tubular frameworks. A multi-level assembly process driven by dynamic covalent bonds and coordination bonds is shown to produce a supramolecular nanotubular framework and three tubular covalent organic frameworks (COFs).

Dec 1, 2023 | nature.com | Kian Ping Loh

AbstractLarge spin-orbit coupling is often thought to be critical in realizing magnetic order-locked charge transport such as the anomalous Hall effect (AHE). Recently, artificial stacks of two-dimensional materials, e.g., magic-angle twisted bilayer graphene on hexagonal boron-nitride heterostructures and dual-gated rhombohedral trilayer graphene, have become platforms for realizing AHE without spin-orbit coupling.

Mar 1, 2023 | dx.doi.org | Wei Fu |Kian Ping Loh

Two-dimensional indium(III) selenide (In2Se3) is characterized by rich polymorphism and offers the prospect of overcoming thickness-related depolarization effects in conventional ferroelectrics. α-In2Se3 has attracted attention as a ferroelectric semiconductor that can retain ferroelectricity at the monolayer level; thus, it can be potentially deployed in high density memory switching modes that bypasses the traditional von Neumann architecture in device design.