Nano Structure Optoelectronics

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Abnormal temperature-dependent transient electroluminescence spikes induced by the leakage of hole carriers in organic light-emitting diodes

Apr 25, 2024 | pubs.aip.org | Nano Structure Optoelectronics |S. Tian |Linhao Li |KaiKai Li

Transient electroluminescence (TEL) commonly serves as a potent diagnostic methodology for exploring the device physics of organic light-emitting diodes (OLEDs), such as carrier transport, charge accumulation and trapping processes, and even device degradation.1–5 The TEL measurement curves from OLEDs powered by a rectangular voltage pulse often present an emission spike after turning off the voltage, especially at low temperatures.

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