
Articles
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Dec 11, 2024 |
jdsupra.com | Sebastian Schulz
In the dynamic landscape of global private equity, MIPs are a crucial tool for attracting, retaining, and motivating executive talent. In this article, we highlight key issues and practical tips for companies planning to operate MIPs across different jurisdictions.
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Dec 10, 2024 |
pubs.aip.org | Ginzton Laboratory |Sebastian Schulz |Christina M. Rost
Recently, nonreciprocal structures that violate Kirchhoff's law of thermal radiation have attracted considerable interest for their potential in solar energy harvesting applications. However, previous research has primarily focused on mid-infrared wavelengths rather than on the main solar wavelength range where sunlight intensity is concentrated.
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Dec 10, 2024 |
pubs.aip.org | Sebastian Schulz |Christina M. Rost
In this work, we have integrated bismuth zinc niobium oxide (BZN), a high-k dielectric material, in metal–insulator–semiconductor (MIS) and field-plated metal–semiconductor (FP-MS) Schottky barrier diodes on -Ga O . This increases the breakdown voltage ( ) from 300 to 600 V by redistributing the electric fields, leveraging the high permittivity of BZN (k 210).
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Dec 10, 2024 |
pubs.aip.org | Sebastian Schulz |Christina M. Rost
Citation Xiujuan ChengXuying ZhouMingyang ShiKunyang ChengGang JiangJiguang Du; The promising 2D monolayers supported single f-electrons atom (Ce, Th, and U) catalysts in the ammonia synthesis via electrochemical nitrogen reduction reaction. Appl. Phys. Lett. 9 December 2024; 125 (24): 243905. https://doi.org/10.1063/5.0239532 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex
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Dec 10, 2024 |
pubs.aip.org | Sebastian Schulz |Christina M. Rost
Topics Molecular dynamics, Crystallographic defects, Crystal structure, Crystallography, Thin film growth, Chemical vapor deposition, Chemical bonding Over the past few decades, III-nitrides have garnered widespread attention due to their outstanding optoelectronic and physical properties.1–3 Attribute to their tunable bandgap (3.4–6.2 eV),4 aluminum nitride (AlN) is frequently used as a buffer layer for ultraviolet light-emitting diodes (UV LEDs)5,6 and high electron mobility transistors...
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