Simon P. Cooil

Jan 8, 2025 | dx.doi.org | Frode S. Strand |Simon P. Cooil |Quinn Campbell |John J. Flounders

IntroductionClick to copy section linkSection link copied!Over the past few decades, the process of silicon δ-doping has seen a lot of activity due to its potential as a platform for quantum computing architectures. (1−3) To this end, considerable effort has been devoted to understand the electronic properties of the resulting two-dimensional electron gases (2DEGs) and develop the fabrication processes to improve the confinement and stability of the dopant layers.