Tinghong Gao

Oct 14, 2023 | dx.doi.org | Lianxin Li |Tinghong Gao |Yue Gao |Bei Wang

Most materials exhibit polymorphism; i.e., their crystallization capacity and behavior are different in different crystal structures. Thus, understanding the material microstructure, particularly the growth behavior of the crystal nucleus, is essential for generating high-performance gallium nitride (GaN) devices.