Wencheng Chen

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High‐Brightness GaN‐Based Blue Light‐Emitting Diodes Using AlON Buffer Layer on 4 In.‐Patterned Sapphire Substrate: Low‐Dislocation‐Defect Epitaxy, Growth Mechanisms, and Higher Device Performance - Li - 2023 - physica status solidi (RRL) - Rapid Research

Apr 29, 2023 | onlinelibrary.wiley.com | Minghang Li |Wencheng Chen |Jiasheng Zhang |Shuming Bai

Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description pssr202300044-sup-0001-SuppData-S1.pdf610.6 KB Supplementary Material References 1, , , , , , , Appl. Phys. Lett. 1994, 65, 593. 2, , , , , , , , , Adv. Mater. 2011, 23, 3284. 3, , , Phys. Status Solidi RRL 2009, 3, 100. 4, , , , , , , , , , , , , , , , , , , , , Adv. Mater. 2022, 34, 2106814. 5, , , , , , , , , , Solid-State Electron. 2003, 47, 1539.

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