Xiaofeng Duan

Oct 1, 2024 | opg.optica.org | Xiaowei Yang |Xiaofeng Duan |Yongqing Huang |Kai Liu

A high-bandwidth and high-power back-illuminated modified uni-traveling-carrier photodiode (MUTC-PD) with InGaAsP/InGaAs as the main material is designed. The influence of the material and doping concentration of the collection layer and transition layer on the electric field distribution were investigated to achieve fast carrier transport. Using a miniaturized mesa diameter reduces the device’s capacitance, leading to an increase in the RC-limited bandwidth of the photodetector (PD).