Zhanfei Han

Aug 29, 2023 | mdpi.com | Zhanfei Han |Xiangdong Li |Hongyue Wang |Yuebo Liu

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Apr 26, 2023 | mdpi.com | Xiangdong Li |Hongyue Wang |Zhanfei Han |Jiahui Yuan

Abstract:The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light. To solve this problem, we processed p-GaN gate HEMTs with transparent indium tin oxide (ITO) as the gate terminal and successfully captured the information mentioned above, utilizing ultraviolet reflectivity thermal imaging equipment.