Compound Semiconductor

Since 1995, Compound Semiconductor has been at the forefront of delivering news, insights, opinions, and services to the global Compound Semiconductor sector. As a vital part of a collection of international publications that cater to the microelectronics industry, Compound Semiconductor benefits from the strengths of its sister publications, EuroAsia Semiconductor and Solar, allowing it to enhance its focus and broaden its global reach. With the highest circulation worldwide and a proven track record of excellence, Compound Semiconductor stands out as the most reliable and influential source for the industry, making it an essential read for the global compound semiconductor community.

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Innocent Innoscience?

1 week ago | compoundsemiconductor.net | Richard Stevenson

The latest ruling from the US Patent Office draws jubilation from Innoscience, while EPC claims to have strengthened its key patent. But aside from the lawyers, will there ever be a winner in this long-running dispute? BY RICHARD STEVENSON, EDITOR, CS MAGAZINE The GaN IP war raging between EPC and Innoscience is now entering a new phase, following rulings from the US Patent and Trademark Office (USPTO) this past month.
Marking milestones

1 month ago | compoundsemiconductor.net | Richard Stevenson

Magazine Feature This article was originally featured in the edition:Volume 31 Issue 2 As we celebrate the thirtieth anniversary of Compound Semiconductor magazine, we take a look back at a pair of commemorate issues, released to mark ten and twenty years of this publication By Richard Stevenson, Editor, CS Magazine How should an editor cover a milestone in the history of their publication?
Displacing GaAs in handsets by 2030 - News

2 months ago | compoundsemiconductor.net | Richard Stevenson

Finwave’s roadmap for the commercialisation of its GaN-on-silicon technology begins with switches and amplifiers for infrastructure, will continue with penetration into the handset. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Over the last 30 years, opportunities for GaAs microelectronics have narrowed.
Multiple materials vie for RF success - News

2 months ago | compoundsemiconductor.net | Richard Stevenson

Magazine Feature This article was originally featured in the edition:Volume 31 Issue 1 Researchers at the recent International Electron Devices Meeting reported breakthroughs in RF devices made from many different materials. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Within the optoelectronic domain, the most suitable material for producing a particular device is pretty obvious.
Going through the gears with gallium nitride - News

Jan 14, 2025 | compoundsemiconductor.net | Richard Stevenson

VisIC plans to ramp production of its GaN depletion-mode HEMTs for electric vehicle inverters before the end of this decade. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Designers of electric vehicles are facing a dilemma when selecting the power electronics for their drive trains. To trim the bill of materials, they favour the use of the silicon IGBT.
ALD: Speeding the pathway from development to production - News

Dec 4, 2024 | compoundsemiconductor.net | Grant Baldwin

Magazine Feature This article was originally featured in the edition:Volume 30 Issue 9 Oxford Instruments’ suite of ALD tools ensures a reliable process transfer from development to production BY GRANT BALDWIN AND AILEEN O’MAHONY FROM OXFORD INSTRUMENTS PLASMA TECHNOLOGY In any manufacturing environment, engineers face a critical challenge when moving a process on from prototype or development to volume production.
300 mm SiC: A format for when? - News

Dec 1, 2024 | compoundsemiconductor.net | Richard Stevenson

Is the unveiling of a 300 mm SiC substrate by SICC going to drive a relatively rapid shift to high-volume production with this format? BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Those in our industry will probably remember the recent Electronica for the unveiling of the world’s first 300 mm SiC substrate. This breakthrough, showcased to the world in mid-November from Munich, Germany, is undoubtedly a great demonstration of technical prowess.
A symphony of semiconductors - News

Nov 17, 2024 | compoundsemiconductor.net | Richard Stevenson

Magazine Feature This article was originally featured in the edition:Volume 30 Issue 8 Industry-facing academics championed the capabilities of devices based on SiC, GaN and Ga2O3 at the recent European workshop on wide bandgap power devices and applications. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE It’s wonderful to listen to a beautiful voice singing a cappella, or a guitar in the hands of a maestro.
MicroLEDs: Eliminating etching - News

Nov 10, 2024 | compoundsemiconductor.net | Richard Stevenson

Pyramidal microLEDs on patterned SiC delivera great performance, even when their dimensions approach the nanoscale. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Ideally, when producing compound semiconductor devices, every process adds functionality without introducing compromise.
Putting India on the global GaN stage - News

Oct 31, 2024 | compoundsemiconductor.net | Richard Stevenson

University spin-out Agnit has just secured funding to grow its GaN portfolio, acombination of epiwafers and power and RF devices. BYRICHARD STEVENSON, EDITOR, CS MAGAZINE For GaN electronics, which serves both the power and RF sectors, evidence of its rapid rise is seen in its double-digit rises in revenue, which will swell this market to several billion dollars by the end of this decade. But that’s not the only way to track success.