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1 week ago | 
compoundsemiconductor.net | Richard Stevenson
The latest ruling from the US Patent Office draws jubilation from
Innoscience, while EPC claims to have strengthened its key patent. But
aside from the lawyers, will there ever be a winner in this long-running
dispute? BY RICHARD STEVENSON, EDITOR, CS MAGAZINE The GaN IP war raging between EPC and Innoscience is now entering a new phase, following rulings from the US Patent and Trademark Office (USPTO) this past month.
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1 month ago | 
compoundsemiconductor.net | Richard Stevenson
Magazine Feature This article was originally featured in the edition:Volume 31 Issue 2 As we celebrate the thirtieth anniversary of Compound Semiconductor magazine, we take a look back at a pair of commemorate issues, released to mark ten and twenty years of this publication By Richard Stevenson, Editor, CS Magazine How should an editor cover a milestone in the history of their publication?
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2 months ago | 
compoundsemiconductor.net | Richard Stevenson
Finwave’s roadmap for the commercialisation of its GaN-on-silicon technology begins with switches and amplifiers for infrastructure, will continue with penetration into the handset. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Over the last 30 years, opportunities for GaAs microelectronics have narrowed.
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2 months ago | 
compoundsemiconductor.net | Richard Stevenson
Magazine Feature This article was originally featured in the edition:Volume 31 Issue 1 Researchers at the recent International Electron Devices Meeting reported breakthroughs in RF devices made from many different materials. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Within the optoelectronic domain, the most suitable material for producing a particular device is pretty obvious.
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Jan 14, 2025 | 
compoundsemiconductor.net | Richard Stevenson
VisIC plans to ramp production of its GaN depletion-mode HEMTs for electric vehicle inverters before the end of this decade. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Designers of electric vehicles are facing a dilemma when selecting the power electronics for their drive trains. To trim the bill of materials, they favour the use of the silicon IGBT.
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Dec 1, 2024 | 
compoundsemiconductor.net | Richard Stevenson
Is the unveiling of a 300 mm SiC substrate by SICC going to drive a relatively rapid shift to high-volume production with this format? BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Those in our industry will probably remember the recent Electronica for the unveiling of the world’s first 300 mm SiC substrate. This breakthrough, showcased to the world in mid-November from Munich, Germany, is undoubtedly a great demonstration of technical prowess.
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Nov 17, 2024 | 
compoundsemiconductor.net | Richard Stevenson
Magazine Feature This article was originally featured in the edition:Volume 30 Issue 8 Industry-facing academics championed the capabilities of devices based on SiC, GaN and Ga2O3 at the recent European workshop on wide bandgap power devices and applications. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE It’s wonderful to listen to a beautiful voice singing a cappella, or a guitar in the hands of a maestro.
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Nov 10, 2024 | 
compoundsemiconductor.net | Richard Stevenson
Pyramidal microLEDs on patterned SiC delivera great performance, even when their dimensions approach the nanoscale. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE Ideally, when producing compound semiconductor devices, every process adds functionality without introducing compromise.
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Oct 31, 2024 | 
compoundsemiconductor.net | Richard Stevenson
University spin-out Agnit has just secured funding to grow its GaN portfolio, acombination of epiwafers and power and RF devices. BYRICHARD STEVENSON, EDITOR, CS MAGAZINE For GaN electronics, which serves both the power and RF sectors, evidence of its rapid rise is seen in its double-digit rises in revenue, which will swell this market to several billion dollars by the end of this decade. But that’s not the only way to track success.
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Oct 6, 2024 | 
powerelectronicsworld.net | Richard Stevenson
Migrating the manufacture of GaN power devices to 300 mm lines will boost
yield, improve metrology and trim costs.
BY
RICHARD STEVENSON, EDITOR, CS MAGAZINE A common metric for measuring performance of any device is the bang per buck. When it comes to GaN, there are many ways to measure that ‘bang’. They include the on-resistance, the breakdown voltage, and the mobility of the two-dimensional electron gas. But what about the ‘buck’?
