Cara-Lena Nies

Jul 11, 2024 | onlinelibrary.wiley.com | Cara-Lena Nies |Stefan Schulz

1 Introduction The low quantum efficiency of deep UV and red light emitting diodes (LEDs) based on III-nitride (III-N) materials is a well-known bottleneck toward creating efficient, commercially available LEDs in the 220–280 nm and 620–750 nm wavelength ranges.[1, 2] Efficient red LEDs are of particular interest for creating full color LED displays, including micro-LEDs for augmented reality (AR) and virtual reality (VR) applications.[2-4] In principle, (In,Ga)N-based LEDs can provide all...