Filippo Di Giovanni

4 weeks ago | powerelectronicsnews.com | Filippo Di Giovanni

Gallium nitride HEMTs have emerged as a transformative technology in power electronics. Initially, GaN technology was developed for high-frequency applications (RF) and later gained prominence in fast-charging solutions due to its superior properties over traditional, silicon-based semiconductors. GaN is a wide-bandgap semiconductor with high electron mobility, enabling it to handle higher voltages, operate at higher frequencies, and generate less heat.

1 month ago | powerelectronicsnews.com | Filippo Di Giovanni

Wide-bandgap (WBG) semiconductor technologies—particularly silicon carbide and gallium nitride—are radically transforming the power electronics industry. Unlike silicon semiconductors, SiC and GaN boast a wider bandgap, along with other distinct properties, that enable devices to operate at higher voltages, temperatures, and frequencies.

1 month ago | embedded.com | Filippo Di Giovanni

CEA-Leti Combines Emission and Detection in MicroLED PanelsIn the highly dynamic world of display technology, CEA-Leti has taken a significant step forward by unveiling a pioneering solution that merges two key capabilities into one system: light emission and light detection. At the heart of this innovation lies microLED technology, renowned for its brightness, energy efficiency, and long lifespan.

1 month ago | powerelectronicsnews.com | Filippo Di Giovanni

As artificial intelligence (AI) and high-performance computing (HPC) workloads push the boundaries of computational power, data centers must evolve to keep up. NVIDIA and Infineon are leading this transformation with a bold shift from traditional low-voltage systems to a more efficient high-voltage architecture. At GTC 2025, NVIDIA unveiled its 800V High-Voltage DC (HVDC) architecture —a scalable, energy-efficient solution designed for next-generation AI factories.

1 month ago | powerelectronicsnews.com | Filippo Di Giovanni

The development of power semiconductors has been driven by the relentless pursuit of devices that operate as close as possible to an ideal switch. Over the years, designers have envisioned a technology capable of creating switches that block reverse voltages and conduct current in both directions with near-zero losses. Today, with the introduction of GaN technology, that vision is partially becoming a reality. This was the key takeaway from a recent webinar hosted by Navitas.