
Gangqiang Zhu
Articles
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Dec 19, 2024 |
pubs.rsc.org | Gangqiang Zhu
The isovalent alloying assisted anomalous valley Hall effect in a hexagonal antiferromagnetic monolayer† Exploring the combination of antiferromagnetic (AFM) spintronics and the anomalous valley Hall effect (AVHE) is one of the most important aspects for developing valleytronic applications. The key to address this issue is to achieve spin splitting around the valleys in AFM systems.
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Oct 28, 2024 |
pubs.rsc.org | Liguo Zhang |San-Dong Guo |XiaoShu Guo |Gangqiang Zhu
Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the valleys in AFM systems. Here, we propose a possible way for achieving AVHE in hexagonal AFM monolayer, which involves the isovalent alloying.
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Apr 17, 2024 |
link.aps.org | San-Dong Guo |Wei Xu |Yang Xue |Gangqiang Zhu
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed-matter physics and device engineering. Here we propose a route to achieve an AVHE in A-type AFM insulator composed of vertically stacked monolayer quantum anomalous Hall insulators with strain and electric field modulations.
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