San-Dong Guo

Oct 28, 2024 | pubs.rsc.org | Liguo Zhang |San-Dong Guo |XiaoShu Guo |Gangqiang Zhu

Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the valleys in AFM systems. Here, we propose a possible way for achieving AVHE in hexagonal AFM monolayer, which involves the isovalent alloying.

Jul 11, 2024 | link.aps.org | San-Dong Guo |Liguo Zhang |Yiwen Zhang |Ping Li

Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultrahigh dynamic speed. To achieve spontaneous valley polarization and anomalous valley Hall effect (AVHE) in AFM materials is of great significance for potential applications in spintronics and valleytronics. Here, we predict an A-type AFM monolayer Fe2CF2 with large spontaneous valley polarization.

May 20, 2024 | pubs.rsc.org | Liguo Zhang |San-Dong Guo |Guangzhao Wang

Spontaneous and reversible spin-splitting in ferroelectric A-type antiferromagnetism The antiferromagnetic (AFM) spintronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the net magnetization of AFM materials is fully compensated, and the spontaneous spin-splitting is absent, which hinders the control and detection of antiferromagnetism.

Apr 17, 2024 | link.aps.org | San-Dong Guo |Wei Xu |Yang Xue |Gangqiang Zhu

Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed-matter physics and device engineering. Here we propose a route to achieve an AVHE in A-type AFM insulator composed of vertically stacked monolayer quantum anomalous Hall insulators with strain and electric field modulations.

Nov 6, 2023 | link.aps.org | San-Dong Guo

Antiferromagnetic (AFM) materials are robust to external magnetic perturbation due to the absence of net magnetic moment, which also eliminates spin splitting in the band structures. Altermagnetism provides a route to resurrect the spin-split bands in a collinear symmetry-compensated antiferromagnet with special magnetic space group. Here we propose an alternative mechanism to achieve spin splitting in a two-dimensional (2D) Janus A-type AFM material.