Jean-Philippe Soulié

Dec 4, 2024 | pubs.aip.org | Simon FRASER |Senthil kumar |Grzegorz Greczynski |Jean-Philippe Soulié

Donor spins in ZnO have been shown to be promising qubit candidates for quantum information (QI) applications due to the low spin–orbit coupling of this material and its direct bandgap.1 ZnO nanowires offer a platform providing localized donor spins, which can be addressed optically via bound exciton transitions in the near UV range.2 Controlled doping is the key to realization of such devices.

Dec 3, 2024 | pubs.aip.org | Grzegorz Greczynski |Jean-Philippe Soulié

FIG. 9. The maps of laser modification of the Si target in the regime of melting and resolidification predicted in 2D simulations and plotted in the parameter space of laser peak fluence – pulse duration in (a) and laser peak fluence – laser spot diameter in (b). The laser spot diameter is 70 μm in (a) and the pulse duration is 30 ps in (b). The laser wavelength is 532 nm in both sets of simulations. Each data point represents one simulation performed with the corresponding laser parameters.

Dec 3, 2024 | pubs.aip.org | Grzegorz Greczynski |Jean-Philippe Soulié

Figures 2(a)–2(c) show the displacement of the atoms around the oxygen vacancy under finite electric fields. The cations Ba and Hf move in the same direction of the electric field, while the anion O moves in the opposite direction. Additionally, the magnitude of displacement increases with the applied electric field. This relative displacement of cations and anions leads to electric polarization, with the polarization magnitude increasing with the electric field, which is shown later.