Jiahui Yuan

Apr 26, 2023 | mdpi.com | Xiangdong Li |Hongyue Wang |Zhanfei Han |Jiahui Yuan

Abstract:The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light. To solve this problem, we processed p-GaN gate HEMTs with transparent indium tin oxide (ITO) as the gate terminal and successfully captured the information mentioned above, utilizing ultraviolet reflectivity thermal imaging equipment.