Kwan-Ho Kim

Apr 28, 2024 | nature.com | Yunfei He |Kwan-Ho Kim |Xingyu Du |Venkata Puli |Eric A. Stach |W. Joshua Kennedy | +2 more

AbstractNon-volatile memory devices that can operate reliably at high temperature are required for the development of extreme environment electronics. However, creating such devices remains challenging. Here we report a non-volatile memory device that is based on an aluminium scandium nitride (Al0.68Sc0.32N) ferroelectric diode and can operate at temperatures of up to 600 °C. The devices are composed of metal–insulator–metal structures of nickel/AlScN/platinum grown on 4-inch silicon wafers.

Mar 14, 2024 | dx.doi.org | Kwan-Ho Kim |Zirun Han |Yinuo Zhang |Pariasadat Musavigharavi

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Apr 27, 2023 | nature.com | Kwan-Ho Kim

AbstractFerroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies.