Zirun Han

Oct 9, 2024 | pubs.acs.org | Soumya Sarkar |Zirun Han |Maheera Abdul Ghani |Nives Strkalj

The rapid advancement of data-driven technologies will require the development of low-power devices that overcome the von Neumann bottleneck for efficient data processing. (1,2) Nonvolatile memories (NVMs) based on ferroelectric materials represent a promising solution for realizing such integrated devices.

Apr 28, 2024 | nature.com | Yunfei He |Kwan-Ho Kim |Xingyu Du |Venkata Puli |Eric A. Stach |W. Joshua Kennedy | +2 more

AbstractNon-volatile memory devices that can operate reliably at high temperature are required for the development of extreme environment electronics. However, creating such devices remains challenging. Here we report a non-volatile memory device that is based on an aluminium scandium nitride (Al0.68Sc0.32N) ferroelectric diode and can operate at temperatures of up to 600 °C. The devices are composed of metal–insulator–metal structures of nickel/AlScN/platinum grown on 4-inch silicon wafers.

Mar 14, 2024 | dx.doi.org | Kwan-Ho Kim |Zirun Han |Yinuo Zhang |Pariasadat Musavigharavi

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