Lee Goldberg

Princeton

Contributing Editor and Writer at Electronic Design

Journalist, Editor-in-Chief, Technical Writer & Technology Consultant with experience a wide range of technologies, Agent Provocateur.

Featured in: Favicon

arstechnica.com Favicon

electronicdesign.com

Articles

Gen-6 SJ MOSFETs Aimed at AI, Industrial Apps, and Smart-Home Appliances

1 week ago | electronicdesign.com | Lee Goldberg

Magnachip Semiconductor introduced 25 new 6th-generation SJ MOSFETs, on display at APEC 2025, that offer a 40% reduction in specific on-resistance (R SP) and 23% reduction in switching speeds over its 5th-gen products. All devices include a Zener diode embedded between the gate and source to enhance reliability and protect the SJ MOSFETs from ESD-induced damage. Fabricating the devices using the company's Gen-6 process also shrinks their silicon footprint by approximately 30%.
80/100-V Power MOSFETs Feature Low On-Resistance and AEC-Q Qualification

1 week ago | electronicdesign.com | Lee Goldberg

The PerFET family of power MOSFETs crafted by Taiwan Semiconductor now includes a pair of 80- and 100-V N-channel power devices that offer a best-in-class figure of merit (FOM: R DS(on)*Q = 184) and 175°C avalanche rating. The AEC-Q-qualified PerFETs' low on-resistance (R DS(on)) reduces conduction losses, and their very low gate charge (Q g) suits them for automotive power applications as well as commercial and industrial designs where efficiency and reliability are important.
Cool-Running 1,200-V SiC MOSFETs Feature Compact Packaging with Topside Cooling

1 week ago | electronicdesign.com | Lee Goldberg

At APEC 2025, Nexperia announced several important additions to its portfolio of enhancement-mode GaN and SiC devices. Among them is a new series of 1,200-V SIC MOSFETs available in thermally enhanced packaging for high-power, high-performance applications. The new X.PAK package builds on some of the topside-cooling concepts developed by STMicroelectronics to provide extremely effective cooling within its compact form factor of 14 × 18.5 mm.
USB-PD Converter Uses GaN to Deliver Space-Saving Power

1 week ago | electronicdesign.com | Lee Goldberg

The VIPerGaN65D flyback converter, with its SOIC16 outline, serves up to 65 W of power to extremely small and economical power supplies, adapters, and USB-PD (Power Delivery) fast chargers. Input voltages range from 85 to 265 V, or up to 85 W across a narrower input range. Developed by STMicroelectronics, the quasi-resonant offline converter integrates a 700-V gallium-nitride (GaN) transistor and an optimized gate driver that can operate at up to 240 kHz with minimal switching losses.
Single-Stage Bidirectional Switch Converters Target EV Chargers, Solar Inverters, and More

1 week ago | electronicdesign.com | Lee Goldberg
Switcher Supply ICs Boost Power While Cutting Cost and Footprint

1 week ago | electronicdesign.com | Lee Goldberg

The recently released TinySwitch-5 series of switching ICs from Power Integrations leverages an application-optimized architecture to offer an economical, more compact solution for applications requiring up to 200 W. And they don't compromise on performance.
Modular Hardware/Software Development Ecosystem Aimed at Electric Two-Wheelers

2 weeks ago | electronicdesign.com | Lee Goldberg
Old Friends Debate APEC 2025's Most Disruptive Technologies

2 weeks ago | electronicdesign.com | Lee Goldberg

The first application Ferric targeted is advanced voltage regulators to address the unique needs of today's ultra-high-powered AI processors and advanced server CPUs.While at least a dozen companies offered excellent solutions to deliver the near-impossible currents required to power modern GPUs, Feric developed a unique capability to integrate thin-film magnetic power inductors within their devices' packages that eliminates the need for bulky external components.
Hybrid Power Architecture Delivers GaN, IGBT Advantages to EV Apps

2 weeks ago | electronicdesign.com | Lee Goldberg

Products based on the Combo ICeGaN architecture take advantage of the fact that ICeGaN and IGBT devices have similar drive voltage ranges (e.g., 0 to 20 V), enabling them to be operated in parallel. During operation under light-load/low-current conditions, the ICeGaN switch provides very efficient operation, with low conduction and low switching losses. As load currents rise toward full load or during surge conditions, the high-power (and less expensive) IGBT supplements the module's output.
An Introduction to Hybrid-Electric Aircraft (Part 2)

4 weeks ago | electronicdesign.com | Lee Goldberg

*It's difficult to make a direct comparison of fuel costs, but a rough estimate is possible using public data to assume the cost of electricity to be $0.12 to $0.15/kWH and the retail price of jet A to vary, depending on location, between $6.00 and $10.00/gallon, at the time of this writing. Since jet fuel contains roughly 39.5 kWh/gallon ($0.15 to $0.25/kWh), it would first appear to be only slightly more expensive, but this changes when you factor in each system's relative efficiency.