Electronic Design

3 days ago | electronicdesign.com | Alix Paultre

One of the healthy aspects of the power engineering space is that the people involved typically consider themselves to be part of a larger community. Of course, other markets and application spaces also form communities, but one could argue that the power engineering community is a strong one with deep roots and connections. This community often manifests itself in its events, where everyone congregates to not only learn, sell, and organize, but also chat, visit, and socialize.

4 days ago | electronicdesign.com | Alix Paultre

Renesas Electronics recently introduced the RA4L1 microcontroller (MCU) group, with 14 new devices offering ultra-low power consumption, advanced security, and segment LCD support. Leveraging the 80-MHz Arm Cortex M33 processor with TrustZone support, the MCUs deliver a combination of performance and power savings that enable designers to address myriad applications, including water meters, smart locks, IoT sensors, and others.

1 week ago | electronicdesign.com | Lee Goldberg

Magnachip Semiconductor introduced 25 new 6th-generation SJ MOSFETs, on display at APEC 2025, that offer a 40% reduction in specific on-resistance (R SP) and 23% reduction in switching speeds over its 5th-gen products. All devices include a Zener diode embedded between the gate and source to enhance reliability and protect the SJ MOSFETs from ESD-induced damage. Fabricating the devices using the company's Gen-6 process also shrinks their silicon footprint by approximately 30%.

1 week ago | electronicdesign.com | Lee Goldberg

The PerFET family of power MOSFETs crafted by Taiwan Semiconductor now includes a pair of 80- and 100-V N-channel power devices that offer a best-in-class figure of merit (FOM: R DS(on)*Q = 184) and 175°C avalanche rating. The AEC-Q-qualified PerFETs' low on-resistance (R DS(on)) reduces conduction losses, and their very low gate charge (Q g) suits them for automotive power applications as well as commercial and industrial designs where efficiency and reliability are important.

1 week ago | electronicdesign.com | Lee Goldberg

At APEC 2025, Nexperia announced several important additions to its portfolio of enhancement-mode GaN and SiC devices. Among them is a new series of 1,200-V SIC MOSFETs available in thermally enhanced packaging for high-power, high-performance applications. The new X.PAK package builds on some of the topside-cooling concepts developed by STMicroelectronics to provide extremely effective cooling within its compact form factor of 14 × 18.5 mm.