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Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Apr 10, 2024 | pubs.aip.org | KaiKai Li |Linhao Li |Near Margalit

Citation Yu-Hsin ChenJimy EncomenderoChandrashekhar SavantVladimir ProtasenkoHuili (Grace) XingDebdeep Jena; Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates. Appl. Phys. Lett. 8 April 2024; 124 (15): 152111. https://doi.org/10.1063/5.0190822 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex
Evidence of local structural distortions and subtle thermal disorder in transparent photochromic yttrium oxyhydride

Apr 9, 2024 | pubs.aip.org | KaiKai Li |Near Margalit |Linhao Li |S. Karazhanov

Topics Density functional theory, Knowledge representation, Transition metals, Crystal structure, X-ray diffraction, Extended X-ray absorption fine structure, Classical statistical mechanics Thin films of yttrium oxyhydride (YHO) exhibit photochromic properties at ambient conditions,1–6 making them of interest for building window applications.
Strain-induced high-Chern-number spin-unlocked edge states in monolayer MnAsO3 with intrinsic quantum anomalous Hall effect

Apr 8, 2024 | pubs.aip.org | Shandong Normal |KaiKai Li |Near Margalit |Linhao Li

Citation Hongxin ChenJiajun LuNaibin WangXiuwen ZhaoGuichao HuXiaobo YuanJunfeng Ren; Strain-induced high-Chern-number spin-unlocked edge states in monolayer MnAsO3 with intrinsic quantum anomalous Hall effect. Appl. Phys. Lett. 8 April 2024; 124 (15): 153101. https://doi.org/10.1063/5.0174081 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex
Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Mar 28, 2024 | pubs.aip.org | KaiKai Li |Near Margalit |Andrew Forbes

Citation Yuanquan HuangHongye YuanBowen NieTiancheng GongYuan WangShuxian LvPengfei JiangWei WeiYang YangJunshuai ChaiZhicheng WuXiaolei WangQing Luo; Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation. Appl. Phys. Lett. 25 March 2024; 124 (13): 133504.
Understanding spin currents from magnon dispersion and polarization: Spin-Seebeck effect and neutron scattering study on Tb3Fe5O12

Mar 27, 2024 | pubs.aip.org | Kirrawee DC |KaiKai Li |Near Margalit |Andrew Forbes

Citation Y. KawamotoT. KikkawaM. KawamataY. UmemotoA. G. ManningK. C. RuleK. IkeuchiK. KamazawaM. FujitaE. SaitohK. KakuraiY. Nambu; Understanding spin currents from magnon dispersion and polarization: Spin-Seebeck effect and neutron scattering study on Tb3Fe5O12. Appl. Phys. Lett. 25 March 2024; 124 (13): 132406. https://doi.org/10.1063/5.0197831 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex
3D-structured photodetectors based on 2D materials

Mar 26, 2024 | pubs.aip.org | Beijing Jiaotong |KaiKai Li |Near Margalit |Andrew Forbes

Topics Field effect transistors, Heterostructures, Photodetectors, Moore's law, Energy use and applications, Nonequilibrium thermodynamics, Graphene, 2D materials, Photoconductivity, Semiconductor materials Over the course of 50 years, microelectronics technology has consistently adhered to Moore's Law, thereby enabling the ongoing enhancement of computing device capabilities while simultaneously reducing their price and cost.
Spin-orbit torque reconfigurable diffraction gratings

Mar 26, 2024 | pubs.aip.org | KaiKai Li |Near Margalit |Andrew Forbes

Topics Spintronics, Spin Hall effect, Holography, Magnetic materials, Gratings, Magnetooptical effects, Optical field, Magneto-optical imaging In heavy-metal (HM)/ferromagnet (FM) bilayers, due to the spin Hall effect, charge current in the HM can induce a pure spin current flowing into the adjacent FM layer, exerting torques on the magnetic moments. This phenomenon is known as spin–orbit torque (SOT).
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

Mar 26, 2024 | pubs.aip.org | KaiKai Li |Near Margalit |Andrew Forbes

Citation JiaQi HePeiRan WangFangZhou DuKangYao WenYang JiangChuYing TangChenKai DengMuJun LiQiaoYu HuNick TaoPeng XiangKai ChengQing WangGang LiHongYu Yu; Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench. Appl. Phys. Lett. 25 March 2024; 124 (13): 132104. https://doi.org/10.1063/5.0193734 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex

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Near Margalit

Articles

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Evidence of local structural distortions and subtle thermal disorder in transparent photochromic yttrium oxyhydride

Strain-induced high-Chern-number spin-unlocked edge states in monolayer MnAsO3 with intrinsic quantum anomalous Hall effect

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Understanding spin currents from magnon dispersion and polarization: Spin-Seebeck effect and neutron scattering study on Tb3Fe5O12

3D-structured photodetectors based on 2D materials

Spin-orbit torque reconfigurable diffraction gratings

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

Contact details

Emails

Socials & Sites