Peixin Qin

Jun 10, 2024 | nature.com | Peixin Qin |Haidong Liang |Zengwei Zhu |Zhongming Zeng |Andrew A. Bettiol |Qinghua Zhang | +2 more

AbstractThe electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases.