
Zengwei Zhu
Articles
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Nov 11, 2024 |
nature.com | Xiaokang Li |Kamran Behnia |Zengwei Zhu
AbstractIn graphite, a moderate magnetic field confines electrons and holes into their lowest Landau levels. In the extreme quantum limit, two insulating states with a dome-like field dependence of the their critical temperatures are induced by the magnetic field.
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Jul 22, 2024 |
nature.com | Jingyue Wang |Junwei Huang |Daniel Kaplan |Xuehan Zhou |Xuzhong Cong |Zengwei Zhu | +3 more
AbstractIn the presence of a high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here we demonstrate the quantum Hall effect in Bi2O2Se thin films.
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Jul 22, 2024 |
nature.com | Jingyue Wang |Junwei Huang |Daniel Kaplan |Xuehan Zhou |Xuzhong Cong |Zengwei Zhu | +3 more
AbstractIn the presence of a high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here we demonstrate the quantum Hall effect in Bi2O2Se thin films.
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Jun 10, 2024 |
nature.com | Peixin Qin |Haidong Liang |Zengwei Zhu |Zhongming Zeng |Andrew A. Bettiol |Qinghua Zhang | +2 more
AbstractThe electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases.
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Mar 24, 2023 |
nature.com | Xiaokang Li |Zengwei Zhu |Kamran Behnia
SamplesThe centimeter-size Mn3Sn crystal was grown by the vertical Bridgman technique27. Firstly, the raw materials (99.999% Mn, 99.999% Sn) with the molar ratio of 3.3 : 1 were heated up to 1100 °C for the precursor crystal growth. Secondly, the precursor crystal power was put in an alumina crucible and sealed in a quartz tube and hung in a vertical Bridgman furnace for the single crystal growth.
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