Wister Wei Huang

Nov 8, 2024 | nature.com | Andraz Omahen |Michele Masseroni |Chuyao Tong |Rebekka Garreis |Jonas Gerber |Wister Wei Huang | +4 more

DeviceThe device is based on a stack of two-dimensional materials as illustrated on Fig. 1a, which was assembled using the standard dry transfer technique28,29,30. It consists of a 35 nm thick top hBN layer, the Bernal BLG sheet, a 28 nm thick bottom hBN, and a graphite backgate layer. The BLG was subsequently contacted with 1D edge contacts28. Three metallic top gates (3 nm Cr, 20 nm Au) were evaporated on top of the stack to define two conducting channels.