Michele Masseroni

Nov 8, 2024 | nature.com | Andraz Omahen |Michele Masseroni |Chuyao Tong |Rebekka Garreis |Jonas Gerber |Wister Wei Huang | +4 more

DeviceThe device is based on a stack of two-dimensional materials as illustrated on Fig. 1a, which was assembled using the standard dry transfer technique28,29,30. It consists of a 35 nm thick top hBN layer, the Bernal BLG sheet, a 28 nm thick bottom hBN, and a graphite backgate layer. The BLG was subsequently contacted with 1D edge contacts28. Three metallic top gates (3 nm Cr, 20 nm Au) were evaporated on top of the stack to define two conducting channels.

Oct 26, 2024 | nature.com | Michele Masseroni |Archisman Panigrahi |Felix R. Fischer |Chuyao Tong |Jonas Gerber |Takashi Taniguchi | +4 more

AbstractVan der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin–orbit coupling (SOC) in graphene.

Feb 28, 2024 | link.aps.org | Tingyu Qu |Engineering Programme |Michele Masseroni |Takashi Taniguchi

We investigate the magnetoresistance of a dual-gated bilayer MoS2 encapsulated by hexagonal boron nitride. At low magnetic fields (|B|<0.5T), we observe a negative magnetoresistance, which we identify as the weak localization effect. We determine both the phase coherence length and mean free path as a function of electron density and displacement field. Both characteristic lengths show a similar monotonic increase with electron density, while they are not affected by the displacement field.

Feb 14, 2023 | link.aps.org | Tingyu Qu |Engineering Programme |Michele Masseroni

Abstract MoS2 is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of the insulating state at low carrier density deserves further investigation, as it is important for fundamental research and applications.