Woo-Hee Kim
Articles
High-quality SiNx thin film growth at 300 ℃ using atomic layer deposition with hollow cathode plasma
Jun 12, 2023 |
pubs.rsc.org | Jae Park |Tae Jun Seok |Ji-Hoon Ahn |Woo-Hee Kim
High-quality SiNx thin film growth at 300 ℃ using atomic layer deposition with hollow cathode plasma Jae Chan Park, Dae Hyun Kim, Tae Jun Seok, Dae Woong Kim, Ji-Hoon Ahn, Woo-Hee Kim and Tae Joo Park Abstract We report high-quality atomic-layer-deposited SiNx thin films using a novel remote plasma source, hollow cathode plasma (HCP), at a low temperature of 300 ℃.
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