Xian-Lei Sheng

Aug 24, 2024 | nature.com | Furong Han |Fan Yang |Huaiwen Yang |Qinghua Zhang |Hao Wu |Jingsheng Chen | +3 more

AbstractThe free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported.

Mar 5, 2024 | iopscience.iop.org | Nanyang Technological |Michael S. Fuhrer |Xian-Lei Sheng |Shengyuan Yang

Bent Weber1 and Michael S Fuhrer2,3 1 School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore 2 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 3 ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia Status The year 2022 marks the 40th anniversary of the discovery of the quantum Hall effect (QHE) [1] (figure 1)—later understood as the...