Yuming Yang

Aug 2, 2024 | pubs.rsc.org | Yuming Yang |Xuemei Zhang |Mi Qin |Jun Liu

The effect of interface polarity on the basal dislocations at the GaN/AlN interface The unavoidable high-density dislocations in GaN usually hinder the normal operation of GaN-based devices. The current theoretical researches mainly focus on the threading dislocations in the bulk GaN crystal. Here, we alternatively turn our attention to the basal dislocations, which have been directly observed in experiments but have been less studied.