Mayukh Das

Nov 13, 2024 | nature.com | Mayukh Das |Harikrishnan Ravichandran |Yongwen Sun |Zhiyu Zhang |Subir Ghosh |Shiva Subbulakshmi Radhakrishnan | +6 more

Correction to: Nature Electronics https://doi.org/10.1038/s41928-024-01265-2, published online 6 November 2024. In the version of the article initially published, the y-axis units in Fig. 2f were “meV” but should have read “eV”; in Fig. 3b, for Ta, “Rc = 18 Ω µm” should have read “Rc = 180 Ω µm”; in the top right panel of Fig. 5d, “Ai” should have read “Al” and in Fig. 5g, the y-axis label was “IMAX” and should have read “ION”.

Nov 5, 2024 | nature.com | Mayukh Das |Harikrishnan Ravichandran |Yongwen Sun |Zhiyu Zhang |Subir Ghosh |Shiva Subbulakshmi Radhakrishnan | +6 more

AbstractIn silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering.

Jun 5, 2023 | dailymotion.com | Mayukh Das

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May 25, 2023 | dailymotion.com | Mayukh Das

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