Zhiyu Zhang

Jan 20, 2025 | pubs.rsc.org | Zhenyu Huang |Kai Li |Zhiyu Zhang |Jianing Liu

Sr4GaNbO8:Mn4+: a novel perovskite-structured red-emitting phosphor for a luminescence lifetime thermometer with good relative sensitivity and repeatability† Through ion substitution, a new Sr4GaNbO8 perovskite structure with the same structure as Sr4AlNbO8 was successfully prepared, and a series of Sr4GaNbO8:Mn4+ phosphors were prepared using a high-temperature solid-state reaction method, after which the related concentration quenching mechanism was demonstrated to be electric dipole–dipole...

Nov 13, 2024 | nature.com | Mayukh Das |Harikrishnan Ravichandran |Yongwen Sun |Zhiyu Zhang |Subir Ghosh |Shiva Subbulakshmi Radhakrishnan | +6 more

Correction to: Nature Electronics https://doi.org/10.1038/s41928-024-01265-2, published online 6 November 2024. In the version of the article initially published, the y-axis units in Fig. 2f were “meV” but should have read “eV”; in Fig. 3b, for Ta, “Rc = 18 Ω µm” should have read “Rc = 180 Ω µm”; in the top right panel of Fig. 5d, “Ai” should have read “Al” and in Fig. 5g, the y-axis label was “IMAX” and should have read “ION”.

Nov 5, 2024 | nature.com | Mayukh Das |Harikrishnan Ravichandran |Yongwen Sun |Zhiyu Zhang |Subir Ghosh |Shiva Subbulakshmi Radhakrishnan | +6 more

AbstractIn silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering.

Oct 8, 2024 | nature.com | Subir Ghosh |Yikai Zheng |Zhiyu Zhang |Yongwen Sun |Thomas F. Schranghamer |Aaryan Oberoi | +1 more

AbstractMonolithic three-dimensional (M3D) integration is being increasingly adopted by the semiconductor industry as an alternative to traditional through-silicon via technology as a way to increase the density of stacked, heterogenous electronic components. M3D integration can also provide transistor-level partitioning and material heterogeneity. However, there are few large-area demonstrations of M3D integration using non-silicon materials.

Sep 14, 2024 | arxiv.org | DA LIU |Anna Wang |Zhiyu Zhang |Jie Gao