Nives Strkalj

Jan 9, 2025 | onlinelibrary.wiley.com | Moritz Müller |Nives Strkalj |Maximilian Becker |Megan Hill

1 Introduction Ferroelectric materials are attractive as future non-volatile memory elements because of their electrically switchable spontaneous polarization.

Oct 9, 2024 | pubs.acs.org | Soumya Sarkar |Zirun Han |Maheera Abdul Ghani |Nives Strkalj

The rapid advancement of data-driven technologies will require the development of low-power devices that overcome the von Neumann bottleneck for efficient data processing. (1,2) Nonvolatile memories (NVMs) based on ferroelectric materials represent a promising solution for realizing such integrated devices.