Maheera Abdul Ghani

Jan 19, 2025 | nature.com | Soumya Sarkar |Peter Newton |Yiru Zhu |Maheera Abdul Ghani |Hu Young Jeong |Yan Wang

AbstractGraphene-based spintronic devices require efficient spin injection, and dielectric tunnel barriers are typically used to facilitate spin injection. However, the direct growth of ultrathin dielectrics on two-dimensional surfaces is challenging and unreliable. Here we report spin injection in graphene lateral spin valves using ferromagnetic van der Waals contacts of indium and cobalt (In–Co), and without the deposition of dielectric tunnel barriers.

Oct 9, 2024 | pubs.acs.org | Soumya Sarkar |Zirun Han |Maheera Abdul Ghani |Nives Strkalj

The rapid advancement of data-driven technologies will require the development of low-power devices that overcome the von Neumann bottleneck for efficient data processing. (1,2) Nonvolatile memories (NVMs) based on ferroelectric materials represent a promising solution for realizing such integrated devices.

Oct 18, 2023 | dx.doi.org | Soumya Sarkar |Jung-In Lee |Yiru Zhu |Maheera Abdul Ghani

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