Tingyu Qu

Feb 28, 2024 | link.aps.org | Tingyu Qu |Engineering Programme |Michele Masseroni |Takashi Taniguchi

We investigate the magnetoresistance of a dual-gated bilayer MoS2 encapsulated by hexagonal boron nitride. At low magnetic fields (|B|<0.5T), we observe a negative magnetoresistance, which we identify as the weak localization effect. We determine both the phase coherence length and mean free path as a function of electron density and displacement field. Both characteristic lengths show a similar monotonic increase with electron density, while they are not affected by the displacement field.

Feb 14, 2023 | link.aps.org | Tingyu Qu |Engineering Programme |Michele Masseroni

Abstract MoS2 is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of the insulating state at low carrier density deserves further investigation, as it is important for fundamental research and applications.