Tingyu Qu

Feb 28, 2024 | link.aps.org | Tingyu Qu |Engineering Programme |Michele Masseroni |Takashi Taniguchi

We investigate the magnetoresistance of a dual-gated bilayer MoS2 encapsulated by hexagonal boron nitride. At low magnetic fields (|B|<0.5T), we observe a negative magnetoresistance, which we identify as the weak localization effect. We determine both the phase coherence length and mean free path as a function of electron density and displacement field. Both characteristic lengths show a similar monotonic increase with electron density, while they are not affected by the displacement field.