
Youngseok Kim
Articles
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Oct 31, 2024 |
fotos.europapress.es | Youngseok Kim
Código: 6314591 Fecha: 31/10/2024 Dimensiones: 771 x 445 (0.06MB) Fotos del Tema: 1 Pie de Foto: El nuevo hilo de seda modificado muestra propiedades prometedoras para convertir los textiles en generadores de electricidad. Aquí, un trozo de tela con el nuevo hilo.
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Oct 2, 2024 |
globalcompetitionreview.com | Ryan Kang |Hwijin Choi |Youngseok Kim
IntroductionThere has been active discussion recently in South Korea on how to properly regulate the digital market. So far, the Korea Fair Trade Commission (KFTC), the country’s competition regulator, has been regulating the digital market by enforcing existing regulations, such as the Monopoly Regulation and Fair Trade Act (MRFTA), and issuing relevant guidelines.
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Sep 1, 2024 |
nature.com | Youngseok Kim
AbstractA method for the characterization of organic electrochemical transistors (OECTs) based on small signal analysis is presented that allows to determine the electronic mobility as a function of continuous gate potential using a standard two-channel AC potentiostat. Vector analysis in the frequency domain allows to exclude parasitic components in both ionic and electronic conduction regardless of film thickness, thus resulting in a standard deviation as low as 4%.
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May 15, 2024 |
link.aps.org | Youngseok Kim |IBM Quantum |Yorktown Heights
Abstract Chiral edge states in a quantum Hall effect are the paradigmatic example of a quasiparticle with chirality. In even space-time dimensions, the Nielsen-Ninomiya theorem strictly forbids chiral states in physical isolation. The exceptions to this theorem only occur in the presence of nonlocality, non-Hermiticity, or by embedding the system at the boundary of the higher-dimensional bulk.
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Jul 27, 2023 |
pubs.rsc.org | Hyunwoo Kang |Dongil Ho |Youngseok Kim |Jaeseung C. Kim
Effect of Channel Thickness on Radiation Hardness of Solution-Processed Oxide Thin Film Transistors Hyunwoo Kang, Dongil Ho, Youngseok Kim, Jaeseung Kim, Hyunjung Kim and Choongik Kim Abstract The effects of channel thickness of thin film transistors (TFTs) based on solution-processed amorphous zinc-indium-tin-oxide (a-ZITO) semiconductor on radiation hardness against proton irradiation was investigated.
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