Zhenzhong Yang

Jan 12, 2024 | nature.com | Zhenzhong Yang |Fangyu Yue |Hui Peng |Rong Huang |Jie Jiang |Wei Tang | +5 more

AbstractAmong today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms.