Rong Huang

Oct 30, 2024 | mdpi.com | Jing Su |Bo Yao |Rong Huang |Xiaoni Liu

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Oct 14, 2024 | mdpi.com | Rong Huang |Junjie Wang |Yi Zhang

All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.

Jul 1, 2024 | mdpi.com | Yantao Liu |Rong Huang |Tao Lin |Jiale Dang

All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.

Jan 13, 2024 | mdpi.com | Yantao Liu |Tao Lin |Rong Huang |Jiahao Shi

All articles published by MDPI are made immediately available worldwide under an open access license. No specialpermission is required to reuse all or part of the article published by MDPI, including figures and tables. Forarticles published under an open access Creative Common CC BY license, any part of the article may be reused withoutpermission provided that the original article is clearly cited. For more information, please refer tohttps://www.mdpi.com/openaccess.

Jan 12, 2024 | nature.com | Zhenzhong Yang |Fangyu Yue |Hui Peng |Rong Huang |Jie Jiang |Wei Tang | +5 more

AbstractAmong today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms.