Zhichun Li

Sep 19, 2024 | onlinelibrary.wiley.com | Zhichun Li |Ao Zhang |Jianjun Gao |Yuanting Lyu

REFERENCES 1, , , et al. A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications. Mater Sci Semicond Process. 2021; 128:105753. 2. Thermal noise in field-effect transistors. Proc IRE. 1962; 50(8): 1808-1812. 3. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence. IEEE Trans Microw Theory Tech. 1989; 37(9): 1340-1350. 4.

May 1, 2024 | onlinelibrary.wiley.com | Zhichun Li |Ao Zhang |Jianjun Gao |Yuanting Lv

REFERENCES 1, , , et al. Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz. IEEE Electron Device Lett. 2012; 33(5): 664-666. doi:10.1109/LED.2012.2187422 2, , , et al. First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process. IEEE Electron Device Lett. 2015; 36(4): 327-329. doi:10.1109/LED.2015.2407193 3. Noise modeling and measurement techniques (HEMTs). IEEE Trans Microw Theory Techn. 1988; 36(1): 1-10.