Jianjun Gao

3 weeks ago | cell.com | Zilong Zhao |Benxia Hu |Yalan Deng |Melinda Soeung |Jun Yao |Lanxin Bei | +25 more

Keywords sickle cell disease renal medullary carcinoma ferroptosis genomic architecture alteration Hi-C H2S SLC7A11 SMARCB1 immune checkpoint inhibitors CD8+ T cells Introduction Sickle cell disease (SCD), the most prevalent inherited blood disorder,1 arises from the homozygous HbS mutation (GAG>GTG: βGlu6Val), causing hemoglobin abnormalities that make red blood cells (RBCs) assume a sickle or crescent shape.2 Individuals with SCD have RBCs prone to hemolysis, leading to vaso-occlusive...

3 weeks ago | cell.com | Zilong Zhao |Benxia Hu |Yalan Deng |Melinda Soeung |Jun Yao |Lanxin Bei | +25 more

Keywords sickle cell disease renal medullary carcinoma ferroptosis genomic architecture alteration Hi-C H2S SLC7A11 SMARCB1 immune checkpoint inhibitors CD8+ T cells Introduction Sickle cell disease (SCD), the most prevalent inherited blood disorder,1 arises from the homozygous HbS mutation (GAG>GTG: βGlu6Val), causing hemoglobin abnormalities that make red blood cells (RBCs) assume a sickle or crescent shape.2 Individuals with SCD have RBCs prone to hemolysis, leading to vaso-occlusive...

Sep 19, 2024 | onlinelibrary.wiley.com | Zhichun Li |Ao Zhang |Jianjun Gao |Yuanting Lyu

REFERENCES 1, , , et al. A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications. Mater Sci Semicond Process. 2021; 128:105753. 2. Thermal noise in field-effect transistors. Proc IRE. 1962; 50(8): 1808-1812. 3. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence. IEEE Trans Microw Theory Tech. 1989; 37(9): 1340-1350. 4.

May 1, 2024 | onlinelibrary.wiley.com | Zhichun Li |Ao Zhang |Jianjun Gao |Yuanting Lv

REFERENCES 1, , , et al. Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz. IEEE Electron Device Lett. 2012; 33(5): 664-666. doi:10.1109/LED.2012.2187422 2, , , et al. First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process. IEEE Electron Device Lett. 2015; 36(4): 327-329. doi:10.1109/LED.2015.2407193 3. Noise modeling and measurement techniques (HEMTs). IEEE Trans Microw Theory Techn. 1988; 36(1): 1-10.

Apr 18, 2024 | onlinelibrary.wiley.com | Jing Bai |Ao Zhang |Jiali Cheng |Jianjun Gao

REFERENCES 1, . A new method of determinig the FET small-signal equivalent circuit. IEEE Trans MTT. 1988; 36(7): 1151-1159. doi:10.1109/22.3650 2, . An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances. IEEE Trans Electron Devices. 1997; 44(5): 906-907. doi:10.1109/16.568058 3, , , et al. A new millimeter-wave small-signal modeling approach for pHEMTs accounting for the output conductance time delay. IEEE Trans Microwave Theory Techn.