Kenji Watanabe

2 months ago | nature.com | I-Hsuan Kao |Junyu Tang |Jiahan Li |James Edgar |David Mandrus |Kenji Watanabe | +3 more

AbstractUnidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface.

2 months ago | nature.com | Lingyuan Kong |Michał Papaj |Hyunjin Kim |Yiran Zhang |Eli Baum |Hui Li | +2 more

AbstractSuperconducting (SC) states that break space-group symmetries of the underlying crystal can exhibit nontrivial spatial modulation of the order parameter. Previously, such states were intimately associated with the breaking of translational symmetry1,2, resulting in the density-wave orders3,4,5,6,7,8, with wavelengths spanning several unit cells9,10,11,12,13,14,15,16,17,18,19.

Nov 26, 2024 | nature.com | Mahmoud Jalali Mehrabad |Tobias Grass |Christian Eckhardt |Kenji Watanabe |Takashi Taniguchi |Glenn Solomon | +4 more

AbstractA fundamental requirement for quantum technologies is the ability to coherently control the interaction between electrons and photons. However, in many scenarios involving the interaction between light and matter, the exchange of linear or angular momentum between electrons and photons is not feasible, a condition known as the dipole approximation limit.

Nov 19, 2024 | nature.com | Leyi Loh |Fengyuan Xuan |Yuan Chen |Zhe Wang |Kenji Watanabe |Takashi Taniguchi | +4 more

AbstractPoint defects in crystalline solids behave as optically addressable individual quantum systems when present in sufficiently low concentrations. In two-dimensional (2D) semiconductors, such quantum defects hold potential as versatile single photon sources.

Nov 8, 2024 | nature.com | Andraz Omahen |Michele Masseroni |Chuyao Tong |Rebekka Garreis |Jonas Gerber |Wister Wei Huang | +4 more

DeviceThe device is based on a stack of two-dimensional materials as illustrated on Fig. 1a, which was assembled using the standard dry transfer technique28,29,30. It consists of a 35 nm thick top hBN layer, the Bernal BLG sheet, a 28 nm thick bottom hBN, and a graphite backgate layer. The BLG was subsequently contacted with 1D edge contacts28. Three metallic top gates (3 nm Cr, 20 nm Au) were evaporated on top of the stack to define two conducting channels.